Job Description Responsibilities:
• Design, fabricate, and characterize emerging NVM, with emphasis on resistive switching memory (RRAM) and characterization techniques.
• Work with the team to develop CMOS compatible RRAM process technology.
• Develop new RRAM device (material and structure) to meet specific needs of embedded NVM applications.
• Set up the electrical characterization capability of RRAM, including DC, AC, and reliability.
Requirements:
• PhD degree in electrical engineering/applied physics or equivalent with major strength in device physics and device characterization.
• Good knowledge in silicon micro-fabrication processes and experienced in memory device characterization.
• Good publication’s track record in relevant fields.
• Capable to work with interdisciplinary team of researchers.
• Excellent communication, presentation and technical writing skills. | |